Chinese semiconductor specialist Enkris Semiconductor, Inc. has successfully demonstrated the manufacture of high voltage Gallium Nitride HEMT (High Electron Mobility Transistor) structures on 200 mm Silicon (GaN-on-Si) with an AIXTRON tool. GaN-on-Si power devices have attracted much attention from both academics and industry recently because of potential applications in power electronics. Due to the defective nature of heteroepitaxial GaN layers grown on silicon, GaN-on-Si power devices ha...